采用等离子体化学气相沉积(PECVD)技术在不同N2O流量条件下制备了镶嵌有纳米晶硅(nc-Si)的富硅氧化硅(SiOx)薄膜,利用透射电镜(TEM),X射线衍射分析(XRD),傅里叶变换红外(FTIR)和透射光谱技术研究了薄膜中的氢含量和氧含量变化及其对薄膜晶化度、薄膜键合结构和光吸收特性的影响.结果表明,薄膜由nc-Si粒子和非晶SiOx组成,为混合相结构.nc-Si的生长与氧化反应的竞争决定了薄膜微观结构、键合特性以及光吸收特性.随着N2O流量的增加,薄膜的晶粒尺寸逐渐减小.晶界区过渡晶硅的比例减少,晶粒界面随之消失,带隙呈持续增加趋势.该实验结果为nc-Si/SiOx薄膜在新型太阳电池中的应用提供了基础数据.
参考文献
[1] | P. Cuony;M. Marending;D. T. L. Alexander;M. Boccard;G. Bugnon;M. Despeisse;C. Ballif.Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells[J].Applied physics letters,201021(21):213502-1-213502-3. |
[2] | 白晓宇;郭群超;柳琴;庞宏杰;张滢清;李红波.PECVD法生长晶化硅薄膜的机理[J].材料科学与工程学报,2013(3):361-364,435. |
[3] | Puzder A.;Williamson AJ.;Grossman JC.;Galli G..Surface control of optical properties in silicon nanoclusters[J].The Journal of Chemical Physics,200214(14):6721-6729. |
[4] | S. Prezioso;S. M. Hossain;A. Anopchenko;L. Pavesi;M. Wang;G. Pucker;P. Bellutti.Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices[J].Applied physics letters,20096(6):062108-1-062108-3-0. |
[5] | 陈乐;谢敏;金璐;王锋;杨德仁.硅含量对SiOx薄膜光学和电学性能的影响[J].材料科学与工程学报,2013(5):651-654. |
[6] | 黄伟其;秦朝建;许丽;吴克跃.纳晶硅氧化层中的陷阱态[J].材料科学与工程学报,2009(1):125-128. |
[7] | Sumita Mukhopadhyay;Swati Ray.Silicon Rich Silicon Oxide Films Deposited By Radio Frequency Plasma Enhanced Chemical Vapor Deposition Method: Optical And Structural Properties[J].Applied Surface Science,201123(23):9717-9723. |
[8] | 朱勇;顾培夫;沈伟东;邹桐.射频磁控反应溅射氮氧化硅薄膜的研究[J].光学学报,2005(4):567-571. |
[9] | M. Molinari;H. Rinnert;M. Vergnat.Improvement of the photoluminescence properties in a-SiN_(x) films by introduction of hydrogen[J].Applied physics letters,200114(14):2172-2174. |
[10] | Samanta, A;Das, D.Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20095(5):588-596. |
[11] | N. Daldosso;G. Das;S. Larcheri;G. Mariotto;G. Dalba;L. Pavesi;A. Irrera;F. Priolo;F. Iacona;F. Rocca.Silicon nanocrystal formation in annealed silicon-rich silicon oxide films prepared by plasma enhanced chemical vapor deposition[J].Journal of Applied Physics,200711(11):113510-1-113510-7-0. |
[12] | S. Mirabella;R. Agosta;G. Franzo;I. Crupi;M. Miritello;R. Lo Savio;M. A. Di Stefano;S. Di Marco;F. Simone;A. Terrasi.Light absorption in silicon quantum dots embedded in silica[J].Journal of Applied Physics,200910(10):103505-1-103505-8. |
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